Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature

Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature

We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO<sub>2</sub> substrates by magnetron sputtering dep...

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Bibliographic Details
Main Authors:	Xingzhen Yan, Kaian Song, Bo Li, Yiqiang Zhang, Fan Yang, Yanjie Wang, Chao Wang, Yaodan Chi, Xiaotian Yang
Format:	Article
Language:	English
Published:	MDPI AG 2022-11-01
Series:	Micromachines
Subjects:	thin film transistor indium-free metal oxide double active layers
Online Access:	https://www.mdpi.com/2072-666X/13/11/2024

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