Fabrication of carbon nanoscrolls from patterned CVD-grown graphene
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2016
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| Online Access: | http://hdl.handle.net/1721.1/100666 |
| _version_ | 1826213561332924416 |
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| author | Logan, Alan D., M. Eng. Massachusetts Institute of Technology |
| author2 | Jing Kong. |
| author_facet | Jing Kong. Logan, Alan D., M. Eng. Massachusetts Institute of Technology |
| author_sort | Logan, Alan D., M. Eng. Massachusetts Institute of Technology |
| collection | MIT |
| description | Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. |
| first_indexed | 2024-09-23T15:51:12Z |
| format | Thesis |
| id | mit-1721.1/100666 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T15:51:12Z |
| publishDate | 2016 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/1006662019-04-12T21:23:05Z Fabrication of carbon nanoscrolls from patterned CVD-grown graphene Logan, Alan D., M. Eng. Massachusetts Institute of Technology Jing Kong. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014. Cataloged from PDF version of thesis. Includes bibliographical references (pages 24-25). A planar process to roll lithographically defined sheets of chemical-vapor-deposition-grown graphene into carbon nanoscrolls by solvent evaporation is attempted. Graphene is observed to roll up by 350 nm on average from unrestrained edges, forming partial nanoscrolls. Resistance is measured while regulating charge carrier concentration with Si0 2 back gate. A large hysteresis is observed between increasing and decreasing backgate voltage sweeps, with a factor of two or greater difference in resistance that persists after backgate voltage returns to 0 V. The hysteresis is more pronounced and consistent in devices with a higher proportion of nanoscroll to flat graphene. by Alan D. Logan. M. Eng. 2016-01-04T20:51:33Z 2016-01-04T20:51:33Z 2014 2014 Thesis http://hdl.handle.net/1721.1/100666 932126354 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 75 pages application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Logan, Alan D., M. Eng. Massachusetts Institute of Technology Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title | Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title_full | Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title_fullStr | Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title_full_unstemmed | Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title_short | Fabrication of carbon nanoscrolls from patterned CVD-grown graphene |
| title_sort | fabrication of carbon nanoscrolls from patterned cvd grown graphene |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/100666 |
| work_keys_str_mv | AT loganalandmengmassachusettsinstituteoftechnology fabricationofcarbonnanoscrollsfrompatternedcvdgrowngraphene |