Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus
As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand the low-frequency (LF) interlayer breathing modes (<100 cm[superscript –1]) i...
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| Format: | Article |
| Language: | en_US |
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American Chemical Society (ACS)
2016
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| Online Access: | http://hdl.handle.net/1721.1/100776 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-1955-3081 https://orcid.org/0000-0002-3618-9074 https://orcid.org/0000-0003-0551-1208 |
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| author | Ling, Xi Liang, Liangbo Huang, Shengxi Puretzky, Alexander A. Geohegan, David B. Sumpter, Bobby G. Kong, Jing Meunier, Vincent Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Ling, Xi Liang, Liangbo Huang, Shengxi Puretzky, Alexander A. Geohegan, David B. Sumpter, Bobby G. Kong, Jing Meunier, Vincent Dresselhaus, Mildred |
| author_sort | Ling, Xi |
| collection | MIT |
| description | As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand the low-frequency (LF) interlayer breathing modes (<100 cm[superscript –1]) in few-layer BP for the first time. Using a laser polarization dependence study and group theory analysis, the breathing modes are assigned to A[subscript g] symmetry. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are considerably more sensitive to interlayer coupling and, thus, their frequencies show a stronger dependence on the number of layers. Hence, they constitute an effective means to probe both the crystalline orientation and thickness of few-layer BP. Furthermore, the temperature dependence shows that in the temperature range −150 to 30 °C, the breathing modes have a weak anharmonic behavior, in contrast to the HF Raman modes that exhibit strong anharmonicity. |
| first_indexed | 2024-09-23T15:00:07Z |
| format | Article |
| id | mit-1721.1/100776 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:00:07Z |
| publishDate | 2016 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1007762022-09-29T12:00:10Z Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus Ling, Xi Liang, Liangbo Huang, Shengxi Puretzky, Alexander A. Geohegan, David B. Sumpter, Bobby G. Kong, Jing Meunier, Vincent Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Research Laboratory of Electronics Ling, Xi Huang, Shengxi Kong, Jing Dresselhaus, Mildred As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand the low-frequency (LF) interlayer breathing modes (<100 cm[superscript –1]) in few-layer BP for the first time. Using a laser polarization dependence study and group theory analysis, the breathing modes are assigned to A[subscript g] symmetry. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are considerably more sensitive to interlayer coupling and, thus, their frequencies show a stronger dependence on the number of layers. Hence, they constitute an effective means to probe both the crystalline orientation and thickness of few-layer BP. Furthermore, the temperature dependence shows that in the temperature range −150 to 30 °C, the breathing modes have a weak anharmonic behavior, in contrast to the HF Raman modes that exhibit strong anharmonicity. National Science Foundation (U.S.) (DMR-1004147) National Science Foundation (U.S.) (DE-SC0001299) 2016-01-10T19:44:59Z 2016-01-10T19:44:59Z 2015-05 Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/100776 Ling, Xi, Liangbo Liang, Shengxi Huang, Alexander A. Puretzky, David B. Geohegan, Bobby G. Sumpter, Jing Kong, Vincent Meunier, and Mildred S. Dresselhaus. “Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus.” Nano Lett. 15, no. 6 (June 10, 2015): 4080–4088. https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-1955-3081 https://orcid.org/0000-0002-3618-9074 https://orcid.org/0000-0003-0551-1208 en_US http://dx.doi.org/10.1021/acs.nanolett.5b01117 Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) ACS |
| spellingShingle | Ling, Xi Liang, Liangbo Huang, Shengxi Puretzky, Alexander A. Geohegan, David B. Sumpter, Bobby G. Kong, Jing Meunier, Vincent Dresselhaus, Mildred Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title | Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title_full | Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title_fullStr | Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title_full_unstemmed | Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title_short | Observation of Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus |
| title_sort | observation of low frequency interlayer breathing modes in few layer black phosphorus |
| url | http://hdl.handle.net/1721.1/100776 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-1955-3081 https://orcid.org/0000-0002-3618-9074 https://orcid.org/0000-0003-0551-1208 |
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