Synthesis of large-area multilayer hexagonal boron nitride for high material performance
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Nature Publishing Group
2016
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| Online Access: | http://hdl.handle.net/1721.1/100807 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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| author | Kim, Soo Min Hsu, Allen Park, Min Ho Chae, Sang Hoon Yun, Seok Joon Lee, Joo Song Cho, Dae-Hyun Fang, Wenjing Lee, Changgu Dresselhaus, Mildred Kim, Ki Kang Lee, Young Hee Kong, Jing Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Kim, Soo Min Hsu, Allen Park, Min Ho Chae, Sang Hoon Yun, Seok Joon Lee, Joo Song Cho, Dae-Hyun Fang, Wenjing Lee, Changgu Dresselhaus, Mildred Kim, Ki Kang Lee, Young Hee Kong, Jing Palacios, Tomas |
| author_sort | Kim, Soo Min |
| collection | MIT |
| description | Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. |
| first_indexed | 2024-09-23T11:44:36Z |
| format | Article |
| id | mit-1721.1/100807 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:44:36Z |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1008072022-10-01T05:43:13Z Synthesis of large-area multilayer hexagonal boron nitride for high material performance Kim, Soo Min Hsu, Allen Park, Min Ho Chae, Sang Hoon Yun, Seok Joon Lee, Joo Song Cho, Dae-Hyun Fang, Wenjing Lee, Changgu Dresselhaus, Mildred Kim, Ki Kang Lee, Young Hee Kong, Jing Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Kim, Soo Min Hsu, Allen Fang, Wenjing Palacios, Tomas Dresselhaus, Mildred Kong, Jing Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. Korea Institute of Science and Technology. Institutional Program National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials Grant DMR-1231319) Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies 2016-01-13T16:25:06Z 2016-01-13T16:25:06Z 2015-10 2015-06 Article http://purl.org/eprint/type/JournalArticle 2041-1723 http://hdl.handle.net/1721.1/100807 Kim, Soo Min, Allen Hsu, Min Ho Park, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae-Hyun Cho, et al. “Synthesis of Large-Area Multilayer Hexagonal Boron Nitride for High Material Performance.” Nat Comms 6 (October 28, 2015): 8662. © 2015 Macmillan Publishers Limited https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1038/ncomms9662 Nature Communications Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Kim, Soo Min Hsu, Allen Park, Min Ho Chae, Sang Hoon Yun, Seok Joon Lee, Joo Song Cho, Dae-Hyun Fang, Wenjing Lee, Changgu Dresselhaus, Mildred Kim, Ki Kang Lee, Young Hee Kong, Jing Palacios, Tomas Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title | Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title_full | Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title_fullStr | Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title_full_unstemmed | Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title_short | Synthesis of large-area multilayer hexagonal boron nitride for high material performance |
| title_sort | synthesis of large area multilayer hexagonal boron nitride for high material performance |
| url | http://hdl.handle.net/1721.1/100807 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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