Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...

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Bibliographic Details
Main Authors: Kim, Soo Min, Hsu, Allen, Park, Min Ho, Chae, Sang Hoon, Yun, Seok Joon, Lee, Joo Song, Cho, Dae-Hyun, Fang, Wenjing, Lee, Changgu, Dresselhaus, Mildred, Kim, Ki Kang, Lee, Young Hee, Kong, Jing, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Nature Publishing Group 2016
Online Access:http://hdl.handle.net/1721.1/100807
https://orcid.org/0000-0002-3416-3962
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/100807
https://orcid.org/0000-0002-3416-3962
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-2190-563X

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