Synthesis of large-area multilayer hexagonal boron nitride for high material performance
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...
| Main Authors: | , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Nature Publishing Group
2016
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| Online Access: | http://hdl.handle.net/1721.1/100807 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |