Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2012.

Bibliographic Details
Main Author: Bernardis, Sarah
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2016
Subjects:
Online Access:http://hdl.handle.net/1721.1/101457
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author Bernardis, Sarah
author2 Massachusetts Institute of Technology. Department of Materials Science and Engineering.
author_facet Massachusetts Institute of Technology. Department of Materials Science and Engineering.
Bernardis, Sarah
author_sort Bernardis, Sarah
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description Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2012.
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spelling mit-1721.1/1014572019-04-12T12:16:05Z Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production Bernardis, Sarah Massachusetts Institute of Technology. Department of Materials Science and Engineering. Massachusetts Institute of Technology. Department of Materials Science and Engineering. Materials Science and Engineering. Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2012. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 127-137). Impurities are detrimental to silicon-based solar cells. A deeper understanding of their evolution, microscopic distributions, and oxidation states throughout the refining processes may enable the discovery of novel refining techniques. Using synchrotron-based microprobe techniques and bulk chemical analyses, we investigate Fe, Ti, and Ca starting from silicon- and carbon bearing raw feedstock materials to metallurgical grade silicon (MG-Si), via carbothermic reduction. Before reduction, impurities are present in distinct micron- or sub-micron-sized minerals, frequently located at structural defects in Si-bearing compounds. Chemical states vary, they are generally oxidized (e.g., Fe²+, Fe³+). Impurity concentrations are directly correlated to the geological type of quartz: pegmatitic and hydrothermal quartz have fewer impurities than quartzite. Particles containing Cr, Mn, Fe, Ni, Cu, K, and/or Zn are also detected. In carbon-bearing compounds, Ca typically follows wood veins. In wood, Fe and Ti are diffused uniformly. In contrast, charcoal samples can contain particles of Fe, Ti, and/or Ca. The overall impurity content in the pine charcoal sample is higher than in the pine woodchip, suggesting that the charcoalization process introduces unintentional contamination. During reduction, silica evolution is analyzed in parallel to Fe. Fe is predominantly clustered in minerals which influence its oxidation state. Here, Fe is embedded in muscovite with predominance of Fe℗đ+. Initially, Fe is affected by the decomposition of muscovite and it is found as Fe²+; as muscovite disappears, Fe diffuses in the molten silica, segregating towards interfaces. Contrary to thermodynamic expectation, Fe is oxidized until late in the reduction process as the silica melt protects it from gases present in the furnace, hence minimizing its reduction, only partially measured at high temperatures. After reduction, the initial low- to sub- ppmw concentrations measured in the precursor quartz increase drastically in the MG-Si. The refining process is responsible for the increased contamination. Yet, most impurities are clustered at grain boundaries and a leaching process could remove them. Electrical fragmentation and a leaching treatment are tested as a method to expose grain boundaries of "dirty" quartzite and to remove impurities. The selective fragmentation proves to be a very important step in removing impurities via leaching. by Sarah Bernardis. Ph. D. 2016-03-03T20:29:45Z 2016-03-03T20:29:45Z 2012 2012 Thesis http://hdl.handle.net/1721.1/101457 940567406 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 137 pages application/pdf Massachusetts Institute of Technology
spellingShingle Materials Science and Engineering.
Bernardis, Sarah
Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title_full Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title_fullStr Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title_full_unstemmed Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title_short Engineering impurity behavior on the micron-scale in metallurgical-grade silicon production
title_sort engineering impurity behavior on the micron scale in metallurgical grade silicon production
topic Materials Science and Engineering.
url http://hdl.handle.net/1721.1/101457
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