Interband quantum tunneling at the band-edges in III-V semiconductor heterojunctions for low-power logic and detectors

Interband quantum tunneling at the band-edges in III-V semiconductor heterojunctions for low-power logic and detectors

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.

Bibliographic Details
Main Author: Iutzi, Ryan (Ryan Michael)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2016
Subjects:
Materials Science and Engineering.
Online Access:http://hdl.handle.net/1721.1/101561

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