Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator

Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides...

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Bibliographic Details
Main Authors: Liu, Wenqing, He, Liang, Xu, Yongbing, Murata, Koichi, Lang, Murong, Maltby, Nick J., Li, Shunpu, Wang, Xuefeng, Ross, Caroline A., Bencok, Peter, van der Laan, Gerrit, Zhang, Rong, Wang, Kang. L., Onbasli, Mehmet Cengiz
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2016
Online Access:http://hdl.handle.net/1721.1/102186
https://orcid.org/0000-0003-2262-1249
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Summary:We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T[subscript C] of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

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