Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator
We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides...
| Main Authors: | , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Chemical Society (ACS)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102186 https://orcid.org/0000-0003-2262-1249 |
| _version_ | 1826196739317563392 |
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| author | Liu, Wenqing He, Liang Xu, Yongbing Murata, Koichi Lang, Murong Maltby, Nick J. Li, Shunpu Wang, Xuefeng Ross, Caroline A. Bencok, Peter van der Laan, Gerrit Zhang, Rong Wang, Kang. L. Onbasli, Mehmet Cengiz Ross, Caroline A. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Liu, Wenqing He, Liang Xu, Yongbing Murata, Koichi Lang, Murong Maltby, Nick J. Li, Shunpu Wang, Xuefeng Ross, Caroline A. Bencok, Peter van der Laan, Gerrit Zhang, Rong Wang, Kang. L. Onbasli, Mehmet Cengiz Ross, Caroline A. |
| author_sort | Liu, Wenqing |
| collection | MIT |
| description | We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T[subscript C] of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface. |
| first_indexed | 2024-09-23T10:36:39Z |
| format | Article |
| id | mit-1721.1/102186 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:36:39Z |
| publishDate | 2016 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1021862022-09-27T10:05:34Z Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator Liu, Wenqing He, Liang Xu, Yongbing Murata, Koichi Lang, Murong Maltby, Nick J. Li, Shunpu Wang, Xuefeng Ross, Caroline A. Bencok, Peter van der Laan, Gerrit Zhang, Rong Wang, Kang. L. Onbasli, Mehmet Cengiz Ross, Caroline A. Massachusetts Institute of Technology. Department of Materials Science and Engineering Onbasli, Mehmet Cengiz Ross, Caroline A. We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T[subscript C] of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface. State Key Programme for Basic Research of China (Grant 2014CB921101) National Natural Science Foundation (China) (Grant 61274102) Science and Technology Facilities Council (Great Britain) United States. Defense Advanced Research Projects Agency. Meso Program (Contract N66001-12-1-4034) United States. Defense Advanced Research Projects Agency. Meso Program (Contract N66001-11-1-4105) 2016-04-06T18:05:16Z 2016-04-06T18:05:16Z 2014-12 2014-12 Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/102186 Liu, Wenqing, Liang He, Yongbing Xu, Koichi Murata, Mehmet C. Onbasli, Murong Lang, Nick J. Maltby, et al. “Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator.” Nano Lett. 15, no. 1 (January 14, 2015): 764–769. https://orcid.org/0000-0003-2262-1249 en_US http://dx.doi.org/10.1021/nl504480g Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) arXiv |
| spellingShingle | Liu, Wenqing He, Liang Xu, Yongbing Murata, Koichi Lang, Murong Maltby, Nick J. Li, Shunpu Wang, Xuefeng Ross, Caroline A. Bencok, Peter van der Laan, Gerrit Zhang, Rong Wang, Kang. L. Onbasli, Mehmet Cengiz Ross, Caroline A. Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title | Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title_full | Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title_fullStr | Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title_full_unstemmed | Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title_short | Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator |
| title_sort | enhancing magnetic ordering in cr doped bi subscript 2 se subscript 3 using high t subscript c ferrimagnetic insulator |
| url | http://hdl.handle.net/1721.1/102186 https://orcid.org/0000-0003-2262-1249 |
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