Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors
We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resi...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102323 https://orcid.org/0000-0002-6341-9226 |
| _version_ | 1811089755269496832 |
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| author | Guo, Luke W. Bennett, Brian R. Boos, John Brad Del Alamo, Jesus A. Lu, Wenjie del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Guo, Luke W. Bennett, Brian R. Boos, John Brad Del Alamo, Jesus A. Lu, Wenjie del Alamo, Jesus A. |
| author_sort | Guo, Luke W. |
| collection | MIT |
| description | We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic scheme, the composite cap structure resulted in a 4x reduction in contact resistance compared with a standard p[superscript ±]-InAs cap. This translates into nearly 3x improvement in the gm of fabricated InGaSb p-channel QW-FETs. Furthermore, Ni contacts on the composite cap were fabricated and a contact resistance of 45 Ω · μm was obtained. An accurate contact resistivity extraction in this very low range is possible through nanotransmission line models with sub-100 nm contacts. In devices of this kind with Ni-based contacts, we derive an ultralow contact resistivity of 5.2 · 10[superscript -8] Ω · cm[superscript 2]. |
| first_indexed | 2024-09-23T14:24:12Z |
| format | Article |
| id | mit-1721.1/102323 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:24:12Z |
| publishDate | 2016 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1023232022-10-01T21:09:27Z Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors Guo, Luke W. Bennett, Brian R. Boos, John Brad Del Alamo, Jesus A. Lu, Wenjie del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories del Alamo, Jesus A. Guo, Luke W. Lu, Wenjie del Alamo, Jesus A. We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic scheme, the composite cap structure resulted in a 4x reduction in contact resistance compared with a standard p[superscript ±]-InAs cap. This translates into nearly 3x improvement in the gm of fabricated InGaSb p-channel QW-FETs. Furthermore, Ni contacts on the composite cap were fabricated and a contact resistance of 45 Ω · μm was obtained. An accurate contact resistivity extraction in this very low range is possible through nanotransmission line models with sub-100 nm contacts. In devices of this kind with Ni-based contacts, we derive an ultralow contact resistivity of 5.2 · 10[superscript -8] Ω · cm[superscript 2]. Samsung (Firm) Intel Corporation 2016-04-28T16:25:31Z 2016-04-28T16:25:31Z 2015-05 2015-04 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 http://hdl.handle.net/1721.1/102323 Guo, Luke W., Wenjie Lu, Brian R. Bennett, John Brad Boos, and Jesus A. Del Alamo. “Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors.” IEEE Electron Device Letters 36, no. 6 (June 2015): 546–548. https://orcid.org/0000-0002-6341-9226 en_US http://dx.doi.org/10.1109/LED.2015.2421337 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. Del Alamo via Phoebe Ayers |
| spellingShingle | Guo, Luke W. Bennett, Brian R. Boos, John Brad Del Alamo, Jesus A. Lu, Wenjie del Alamo, Jesus A. Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title | Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title_full | Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title_fullStr | Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title_full_unstemmed | Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title_short | Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors |
| title_sort | ultralow resistance ohmic contacts for p channel ingasb field effect transistors |
| url | http://hdl.handle.net/1721.1/102323 https://orcid.org/0000-0002-6341-9226 |
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