Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resi...

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Bibliographic Details
Main Authors:	Guo, Luke W., Bennett, Brian R., Boos, John Brad, Del Alamo, Jesus A., Lu, Wenjie, del Alamo, Jesus A.
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2016
Online Access:	http://hdl.handle.net/1721.1/102323 https://orcid.org/0000-0002-6341-9226

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