Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides

Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides

We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultrastrong and extremely robust, despite it being merely interfacially induced,...

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Bibliographic Details
Main Authors: Wang, Zhe, Ki, Dong-Keun, Mauro, Diego, Berger, Helmuth, Morpurgo, Alberto F., Khoo, Jun Yong, Levitov, Leonid
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:English
Published: American Physical Society 2016
Online Access:http://hdl.handle.net/1721.1/105523
https://orcid.org/0000-0003-0908-3343
https://orcid.org/0000-0002-4268-731X

Internet

http://hdl.handle.net/1721.1/105523
https://orcid.org/0000-0003-0908-3343
https://orcid.org/0000-0002-4268-731X

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