Electronic transport in low-angle twisted bilayer graphene

Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.

Bibliographic Details
Main Author: Cao, Yuan, Ph. D. Massachusetts Institute of Technology
Other Authors: Pablo Jarillo-Herrero.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2016
Subjects:
Online Access:http://hdl.handle.net/1721.1/105685
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author Cao, Yuan, Ph. D. Massachusetts Institute of Technology
author2 Pablo Jarillo-Herrero.
author_facet Pablo Jarillo-Herrero.
Cao, Yuan, Ph. D. Massachusetts Institute of Technology
author_sort Cao, Yuan, Ph. D. Massachusetts Institute of Technology
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description Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
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spelling mit-1721.1/1056852020-12-02T13:23:31Z Electronic transport in low-angle twisted bilayer graphene Cao, Yuan, Ph. D. Massachusetts Institute of Technology Pablo Jarillo-Herrero. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science. Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. Cataloged from PDF version of thesis. Includes bibliographical references (pages 47-48). Graphene is a two-dimensional material with exotic electronic, optical and mechanical properties. By stacking two layers of graphene together with a small rotation angle between them, a superlattice of arbitrarily large size can be formed. The hybridization of the electronic states in the two layers can result in reduced Fermi velocity, van Hove singularities and a gapped band structure. In this work, a novel tear-and-stack technique is developed to reliably produce twisted bilayer graphene with controlled angle, and electronic transport measurements of the resulting high-quality samples are performed and discussed. We discover novel insulating states that purely results from the moiŕe superlattice band structure. The magnetotransport properties of these insulating states are studied and indicate that these states have different structure with those in either graphene or AB-stacked bilayer graphene; it shows a non-monotonous change of Fermi surface area which agrees with theoretical calculations. The results point toward a new pathway for graphene-related physics and material research. by Yuan Cao. S.M. 2016-12-05T19:57:59Z 2016-12-05T19:57:59Z 2016 2016 Thesis http://hdl.handle.net/1721.1/105685 964450770 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 48 pages application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
Cao, Yuan, Ph. D. Massachusetts Institute of Technology
Electronic transport in low-angle twisted bilayer graphene
title Electronic transport in low-angle twisted bilayer graphene
title_full Electronic transport in low-angle twisted bilayer graphene
title_fullStr Electronic transport in low-angle twisted bilayer graphene
title_full_unstemmed Electronic transport in low-angle twisted bilayer graphene
title_short Electronic transport in low-angle twisted bilayer graphene
title_sort electronic transport in low angle twisted bilayer graphene
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/105685
work_keys_str_mv AT caoyuanphdmassachusettsinstituteoftechnology electronictransportinlowangletwistedbilayergraphene