Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6° offcut has a tensile strain of 0.6%. This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. This discrep...
| Príomhchruthaitheoirí: | , , , , |
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| Rannpháirtithe: | |
| Formáid: | Alt |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Springer US
2016
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| Rochtain ar líne: | http://hdl.handle.net/1721.1/105855 https://orcid.org/0000-0002-1891-1959 |