Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes
We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography...
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| פורמט: | Article |
| שפה: | English |
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American Physical Society
2016
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| גישה מקוונת: | http://hdl.handle.net/1721.1/106141 https://orcid.org/0000-0003-3116-6719 https://orcid.org/0000-0002-5559-4286 https://orcid.org/0000-0001-8345-4937 |
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| author | Schoofs, Frank Ramanathan, Shriram Jaramillo, Rafael Youssef, Amanda Akey, Austin J Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Schoofs, Frank Ramanathan, Shriram Jaramillo, Rafael Youssef, Amanda Akey, Austin J Buonassisi, Anthony |
| author_sort | Schoofs, Frank |
| collection | MIT |
| description | We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO∶Al at the junction is likely to be metallic even when the bulk of the ZnO∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface. |
| first_indexed | 2024-09-23T08:02:42Z |
| format | Article |
| id | mit-1721.1/106141 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T08:02:42Z |
| publishDate | 2016 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/1061412022-09-23T10:32:16Z Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes Using Atom-Probe Tomography to Understand ZnO∶Al=SiO2=Si Schottky Diodes Schoofs, Frank Ramanathan, Shriram Jaramillo, Rafael Youssef, Amanda Akey, Austin J Buonassisi, Anthony Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Mechanical Engineering Jaramillo, Rafael Youssef, Amanda Akey, Austin J Buonassisi, Anthony We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO∶Al at the junction is likely to be metallic even when the bulk of the ZnO∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface. United States. Dept. of Energy (EERE Postdoctoral Research Award) United States. Air Force Office of Scientific Research (Contract FA9550-12-1- 0189) National Science Foundation (U.S.) (Contract DMR-0952794) United States. Dept. of Energy (Bay Area Photovoltaic Consortium. Contract DE-EE0004946) National Science Foundation (U.S.) (Center for Nanoscale Systems. Contract ECS-0335765) 2016-12-27T15:38:05Z 2016-12-27T15:38:05Z 2016-09 2016-07 2016-09-26T22:00:10Z Article http://purl.org/eprint/type/JournalArticle 2331-7019 http://hdl.handle.net/1721.1/106141 Jaramillo, R. et al. “Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O[subscript 2] / Si Schottky Diodes.” Physical Review Applied 6.3 (2016): n. pag. CrossRef. Web. 27 Dec. 2016. © 2016 American Physical Society https://orcid.org/0000-0003-3116-6719 https://orcid.org/0000-0002-5559-4286 https://orcid.org/0000-0001-8345-4937 en http://dx.doi.org/10.1103/PhysRevApplied.6.034016 Physical Review Applied Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Schoofs, Frank Ramanathan, Shriram Jaramillo, Rafael Youssef, Amanda Akey, Austin J Buonassisi, Anthony Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title | Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title_full | Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title_fullStr | Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title_full_unstemmed | Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title_short | Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes |
| title_sort | using atom probe tomography to understand zno∶al sio subscript 2 si schottky diodes |
| url | http://hdl.handle.net/1721.1/106141 https://orcid.org/0000-0003-3116-6719 https://orcid.org/0000-0002-5559-4286 https://orcid.org/0000-0001-8345-4937 |
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