Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes

Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes

We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography...

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Podrobná bibliografie
Hlavní autoři: Schoofs, Frank, Ramanathan, Shriram, Jaramillo, Rafael, Youssef, Amanda, Akey, Austin J, Buonassisi, Anthony
Další autoři: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Médium: Článek
Jazyk:English
Vydáno: American Physical Society 2016
On-line přístup:http://hdl.handle.net/1721.1/106141
https://orcid.org/0000-0003-3116-6719
https://orcid.org/0000-0002-5559-4286
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/106141
https://orcid.org/0000-0003-3116-6719
https://orcid.org/0000-0002-5559-4286
https://orcid.org/0000-0001-8345-4937

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