Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes
We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography...
| 主要な著者: | , , , , , |
|---|---|
| その他の著者: | |
| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
American Physical Society
2016
|
| オンライン･アクセス: | http://hdl.handle.net/1721.1/106141 https://orcid.org/0000-0003-3116-6719 https://orcid.org/0000-0002-5559-4286 https://orcid.org/0000-0001-8345-4937 |