First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs
We present a first-principles framework to investigate the electron scattering channels and transport properties for polar materials by combining the exact solution of the linearized electron-phonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupli...
Main Authors: | Singh, David J., Liu, Te Huan, Zhou, Jiawei, Liao, Bolin, Chen, Gang |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Mechanical Engineering |
Format: | Article |
Language: | English |
Published: |
American Physical Society
2017
|
Online Access: | http://hdl.handle.net/1721.1/107003 https://orcid.org/0000-0002-1157-8540 https://orcid.org/0000-0002-9872-5688 https://orcid.org/0000-0002-0898-0803 https://orcid.org/0000-0002-3968-8530 |
Similar Items
-
First-principles simulation of electron mean-free-path spectra and thermoelectric properties in silicon
by: Qiu, Bo, et al.
Published: (2015) -
Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures
by: Maciel, A, et al.
Published: (1996) -
Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
by: Turner, K, et al.
Published: (1996) -
Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature
by: Liao, Bolin, et al.
Published: (2017) -
Generalized Two-Temperature Model for Coupled Phonon-Magnon Diffusion
by: Liao, Bolin, et al.
Published: (2014)