Bias temperature instability (BTI) in GaN MOSFETs

Bias temperature instability (BTI) in GaN MOSFETs

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.

Bibliographic Details
Main Author:	Guo, Alex
Other Authors:	Jesús A. del Alamo.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2017
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/107335

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