Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor
We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopan...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Springer Berlin Heidelberg
2017
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| Online Access: | http://hdl.handle.net/1721.1/107685 |
| _version_ | 1811077238117892096 |
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| author | Sher, Meng-Ju Franta, Benjamin Lin, Yu-Ting Mazur, Eric Smith, Matthew J Gradecak, Silvija |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Sher, Meng-Ju Franta, Benjamin Lin, Yu-Ting Mazur, Eric Smith, Matthew J Gradecak, Silvija |
| author_sort | Sher, Meng-Ju |
| collection | MIT |
| description | We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopant incorporation and surface texturing mechanisms during fs-laser irradiation of Si coated with a Se thin-film dopant precursor. We show that the crystallization of Se-doped Si and micrometer-scale surface texturing are closely coupled and produce a doped surface that is not conducive to device fabrication. Next, we use this understanding of the dopant incorporation process to decouple dopant crystallization from surface texturing by tailoring the irradiation conditions. A low-fluence regime is identified in which a continuous surface layer of doped crystalline material forms in parallel with laser-induced periodic surface structures over many laser pulses. This investigation demonstrates the ability to tailor the dopant distribution through a systematic investigation of the relationship between fs-laser irradiation conditions, microstructure, and dopant distribution. |
| first_indexed | 2024-09-23T10:39:50Z |
| format | Article |
| id | mit-1721.1/107685 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:39:50Z |
| publishDate | 2017 |
| publisher | Springer Berlin Heidelberg |
| record_format | dspace |
| spelling | mit-1721.1/1076852022-09-27T14:05:47Z Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor Sher, Meng-Ju Franta, Benjamin Lin, Yu-Ting Mazur, Eric Smith, Matthew J Gradecak, Silvija Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Research Laboratory of Electronics Smith, Matthew J Gradecak, Silvija We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopant incorporation and surface texturing mechanisms during fs-laser irradiation of Si coated with a Se thin-film dopant precursor. We show that the crystallization of Se-doped Si and micrometer-scale surface texturing are closely coupled and produce a doped surface that is not conducive to device fabrication. Next, we use this understanding of the dopant incorporation process to decouple dopant crystallization from surface texturing by tailoring the irradiation conditions. A low-fluence regime is identified in which a continuous surface layer of doped crystalline material forms in parallel with laser-induced periodic surface structures over many laser pulses. This investigation demonstrates the ability to tailor the dopant distribution through a systematic investigation of the relationship between fs-laser irradiation conditions, microstructure, and dopant distribution. Chesonis Family Foundation National Science Foundation (U.S.). Engineering Research Center for Quantum Energy and Sustainable Solar Technologies (EEC-1041895) National Science Foundation (U.S.) (awards CBET 0754227 and CHE-DMRDMS 0934480) 2017-03-23T22:44:18Z 2017-03-23T22:44:18Z 2013-03 2013-01 2016-05-23T12:09:53Z Article http://purl.org/eprint/type/JournalArticle 0947-8396 1432-0630 http://hdl.handle.net/1721.1/107685 Smith, Matthew J., Meng-Ju Sher, Benjamin Franta, Yu-Ting Lin, Eric Mazur, and Silvija Gradečak. “Improving Dopant Incorporation During Femtosecond-Laser Doping of Si with a Se Thin-Film Dopant Precursor.” Applied Physics A 114, no. 4 (March 29, 2013): 1009–1016. en http://dx.doi.org/10.1007/s00339-013-7673-8 Applied Physics A Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ Springer-Verlag Berlin Heidelberg application/pdf Springer Berlin Heidelberg Springer Berlin Heidelberg |
| spellingShingle | Sher, Meng-Ju Franta, Benjamin Lin, Yu-Ting Mazur, Eric Smith, Matthew J Gradecak, Silvija Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title | Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title_full | Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title_fullStr | Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title_full_unstemmed | Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title_short | Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor |
| title_sort | improving dopant incorporation during femtosecond laser doping of si with a se thin film dopant precursor |
| url | http://hdl.handle.net/1721.1/107685 |
| work_keys_str_mv | AT shermengju improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor AT frantabenjamin improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor AT linyuting improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor AT mazureric improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor AT smithmatthewj improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor AT gradecaksilvija improvingdopantincorporationduringfemtosecondlaserdopingofsiwithasethinfilmdopantprecursor |