Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor

Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor

We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopan...

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Bibliographic Details
Main Authors: Sher, Meng-Ju, Franta, Benjamin, Lin, Yu-Ting, Mazur, Eric, Smith, Matthew J, Gradecak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer Berlin Heidelberg 2017
Online Access:http://hdl.handle.net/1721.1/107685

Internet

http://hdl.handle.net/1721.1/107685

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