Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor
We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopan...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Springer Berlin Heidelberg
2017
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| Online Access: | http://hdl.handle.net/1721.1/107685 |