Resistive Switching Mechanisms on TaO[subscript x] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

Resistive Switching Mechanisms on TaO[subscript x] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

The local electronic properties of tantalum oxide (TaO[subscript x], 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO[subscript 3]) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in...

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Detalhes bibliográficos
Main Authors: Moors, Marco, Wedig, Anja, Bäumer, Christoph, Skaja, Katharina, Arndt, Benedikt, Dittmann, Regina, Waser, Rainer, Valov, Ilia, Adepalli, Kiran Kumar, Lu, Qiyang, Yildiz, Bilge, Tuller, Harry L.
Outros Autores: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Formato: Artigo
Idioma:en_US
Publicado em: American Chemical Society (ACS) 2017
Acesso em linha:http://hdl.handle.net/1721.1/108660
https://orcid.org/0000-0001-9641-1901
https://orcid.org/0000-0002-9155-3684
https://orcid.org/0000-0001-8339-3222
https://orcid.org/0000-0002-2688-5666

Internet

http://hdl.handle.net/1721.1/108660
https://orcid.org/0000-0001-9641-1901
https://orcid.org/0000-0002-9155-3684
https://orcid.org/0000-0001-8339-3222
https://orcid.org/0000-0002-2688-5666

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