The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | eng |
| Published: |
Massachusetts Institute of Technology
2017
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/109624 |
| _version_ | 1811068616612773888 |
|---|---|
| author | Elcess, Kimberley |
| author2 | Clifton G. Fonstad. |
| author_facet | Clifton G. Fonstad. Elcess, Kimberley |
| author_sort | Elcess, Kimberley |
| collection | MIT |
| description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988. |
| first_indexed | 2024-09-23T07:58:36Z |
| format | Thesis |
| id | mit-1721.1/109624 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T07:58:36Z |
| publishDate | 2017 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/1096242019-04-09T15:54:38Z The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy Elcess, Kimberley Clifton G. Fonstad. Massachusetts Institute of Technology. Department of Materials Science and Engineering. Massachusetts Institute of Technology. Department of Materials Science and Engineering. Materials Science and Engineering. Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988. On t.p. all "x̳" is subscript. Includes bibliographical references. Kimberley Elcess. Ph.D. 2017-06-06T19:22:11Z 2017-06-06T19:22:11Z 1988 1988 Thesis http://hdl.handle.net/1721.1/109624 19283326 eng MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 180 leaves application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Elcess, Kimberley The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title_full | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title_fullStr | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title_full_unstemmed | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title_short | The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy |
| title_sort | effect of strain and orientation on inxga₁₋xas layers grown by molecular beam epitaxy |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/109624 |
| work_keys_str_mv | AT elcesskimberley theeffectofstrainandorientationoninxga1xaslayersgrownbymolecularbeamepitaxy AT elcesskimberley effectofstrainandorientationoninxga1xaslayersgrownbymolecularbeamepitaxy |