The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.

书目详细资料
主要作者:	Elcess, Kimberley
其他作者:	Clifton G. Fonstad.
格式:	Thesis
语言:	eng
出版:	Massachusetts Institute of Technology 2017
主题:	Materials Science and Engineering.
在线阅读:	http://hdl.handle.net/1721.1/109624

相似书籍

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
由: Zou, J, et al.
出版: (1997)

MINIBAND STRUCTURE IN INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
由: Pulsford, N, et al.
出版: (1991)

CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY
由: Zou, J, et al.
出版: (1991)

MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM
由: Levoguer, C, et al.
出版: (1994)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
由: Oleg V. Devitsky, et al.
出版: (2022-05-01)

GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
由: Singh, N, et al.
出版: (1992)

Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
由: Li, He Ming.
出版: (2009)

Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
由: Vicknesh Sahmuganathan
出版: (2008)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
由: Liao, X, et al.
出版: (1999)

Electrical and physical property study of thin films grown by laser molecular beam epitaxy
由: Choy, Chang Ye.
出版: (2009)

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy
由: Loke, Wan Khai, et al.
出版: (2013)

Surface morphology and optical properties of stacked self-assembled InxGa1-xAs QDs grown by metal-organic chemical vapor deposition /
由: Zulkafli Othaman, author, et al.
出版: (2007)

Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
由: Ong, Beng Sheng
出版: (2014)

The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
由: Smith, Frank William
出版: (2005)

Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP
由: Bennett, Brian R. (Brian Robert)
出版: (2006)

Structural and electronic investigations of In2O3 nanostructures and thin films grown by molecular beam epitaxy
由: Zhang, H
出版: (2011)

Characterisation of compound semiconductors grown by molecular beam epitaxy
由: Zhang, Peng Hua
出版: (2009)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
由: Liao, X, et al.
出版: (1998)

SUPERLATTICE MODIFICATION OF THE VALENCE-BAND SPIN SPLITTING IN INXGA1-XAS/GAAS SUPERLATTICES UP TO 45-T
由: Warburton, R, et al.
出版: (1993)

Effect on InxGa1-xAs underlying layer growth mode on the surface morphology of In0.5Ga0.5As/GaAs quantum dots /
由: Abd. Khamim Ismail, author, et al.
出版: (2009)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
由: Lobo, C, et al.
出版: (2000)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
由: Zou, J, et al.
出版: (1999)

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy
由: Igor V. Shtrom, et al.
出版: (2024-11-01)

INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
由: A. L. Sizov, et al.
出版: (2013-10-01)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
由: Mallard, R, et al.
出版: (1989)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
由: Mallard, R, et al.
出版: (1989)

Growth and characterization of ZnSe by metalorganic and gas source molecular beam epitaxy
由: Coronado, Christopher Alan
出版: (2006)

Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
由: Zhang, Weimin
出版: (2008)

Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1−xAs/GaAs quantum dots : an experimental and theoretical study
由: Wen, Yuan, et al.
出版: (2013)

Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy
由: Shubham Mondal, et al.
出版: (2024-11-01)

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy
由: A. Gilbert, et al.
出版: (2025-01-01)

The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers
由: Choi, Y, et al.
出版: (2002)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
由: Han, Zhiyong.
出版: (2008)

BULK AND TRANSFER DOPING EFFECTS IN ALXGA1-XAS LAYERS GROWN ON SEMI-INSULATING GAAS SUBSTRATES
由: Nicholas, R, et al.
出版: (1984)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
由: Liao, X, et al.
出版: (1999)

Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
由: Zainab M. Alharbi, et al.
出版: (2025-01-01)

Magnetic anisotrophy in ultrathin epitaxial films grown on surfaces vicinal to Cu(001)
由: Chuang, Donna Sue
出版: (2006)

Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off
由: Kim, Ki Seok, et al.
出版: (2024)

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
由: Ravikiran, L., et al.
出版: (2014)

InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study
由: D’Costa, Vijay Richard, et al.
出版: (2016)