The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate
We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with...
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| Format: | Article |
| Language: | en_US |
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Elsevier
2017
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| Online Access: | http://hdl.handle.net/1721.1/110037 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826196908148785152 |
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| author | Kohen, David Bao, Shuyu Lee, Kwang Hong Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Fitzgerald, Eugene A |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Kohen, David Bao, Shuyu Lee, Kwang Hong Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Fitzgerald, Eugene A |
| author_sort | Kohen, David |
| collection | MIT |
| description | We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with p(AsH3) of 5 mbar, we obtain a smooth GaAs layer with a root mean square roughness of 4.7 Å. This GaAs layer does not contain anti-phase boundaries. With these optimized growth parameters, we fabricate a virtual GaAs substrate on a 200 mm silicon wafer as a first step towards the integration of III–V devices on silicon. |
| first_indexed | 2024-09-23T10:39:32Z |
| format | Article |
| id | mit-1721.1/110037 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:39:32Z |
| publishDate | 2017 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | mit-1721.1/1100372022-09-27T14:05:05Z The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate Kohen, David Bao, Shuyu Lee, Kwang Hong Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Fitzgerald, Eugene A Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Fitzgerald, Eugene A Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Fitzgerald, Eugene A We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with p(AsH3) of 5 mbar, we obtain a smooth GaAs layer with a root mean square roughness of 4.7 Å. This GaAs layer does not contain anti-phase boundaries. With these optimized growth parameters, we fabricate a virtual GaAs substrate on a 200 mm silicon wafer as a first step towards the integration of III–V devices on silicon. National Research Foundation of Singapore 2017-06-20T13:30:34Z 2017-06-20T13:30:34Z 2015-04 2015-03 Article http://purl.org/eprint/type/JournalArticle 00220248 http://hdl.handle.net/1721.1/110037 Kohen, David, Shuyu Bao, Kwang Hong Lee, Kenneth Eng Kian Lee, Chuan Seng Tan, Soon Fatt Yoon, and Eugene A. Fitzgerald. “The Role of AsH3 Partial Pressure on Anti-Phase Boundary in GaAs-on-Ge Grown by MOCVD – Application to a 200mm GaAs Virtual Substrate.” Journal of Crystal Growth 421 (July 2015): 58–65. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1016/j.jcrysgro.2015.04.003 Journal of Crystal Growth Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Elsevier Prof. Fitzgerald |
| spellingShingle | Kohen, David Bao, Shuyu Lee, Kwang Hong Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Fitzgerald, Eugene A The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title | The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title_full | The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title_fullStr | The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title_full_unstemmed | The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title_short | The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate |
| title_sort | role of ash subscript 3 partial pressure on anti phase boundary in gaas on ge grown by mocvd application to a 200mm gaas virtual substrate |
| url | http://hdl.handle.net/1721.1/110037 https://orcid.org/0000-0002-1891-1959 |
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