The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate
We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Elsevier
2017
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| Online Access: | http://hdl.handle.net/1721.1/110037 https://orcid.org/0000-0002-1891-1959 |