Disorder enabled band structure engineering of a topological insulator surface
Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/110095 https://orcid.org/0000-0002-7183-5203 |
| _version_ | 1826218031005564928 |
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| author | Xu, Yishuai Chiu, Janet Miao, Lin He, Haowei Kapitulnik, A. Biswas, Rudro R. Wray, L. Andrew Alpichshev, Zhanybek |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Xu, Yishuai Chiu, Janet Miao, Lin He, Haowei Kapitulnik, A. Biswas, Rudro R. Wray, L. Andrew Alpichshev, Zhanybek |
| author_sort | Xu, Yishuai |
| collection | MIT |
| description | Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi₂X₃ (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport. |
| first_indexed | 2024-09-23T17:13:03Z |
| format | Article |
| id | mit-1721.1/110095 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T17:13:03Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1100952022-09-30T00:29:41Z Disorder enabled band structure engineering of a topological insulator surface Xu, Yishuai Chiu, Janet Miao, Lin He, Haowei Kapitulnik, A. Biswas, Rudro R. Wray, L. Andrew Alpichshev, Zhanybek Massachusetts Institute of Technology. Department of Physics Alpichshev, Zhanybek Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi₂X₃ (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport. 2017-06-21T13:10:01Z 2017-06-21T13:10:01Z 2017-02 2016-06 Article http://purl.org/eprint/type/JournalArticle 2041-1723 http://hdl.handle.net/1721.1/110095 Xu, Yishuai; Chiu, Janet; Miao, Lin; He, Haowei; Alpichshev, Zhanybek; Kapitulnik, A.; Biswas, Rudro R. and Wray, L. Andrew. “Disorder Enabled Band Structure Engineering of a Topological Insulator Surface.” Nature Communications 8 (February 2017): 14081 © 2017 The Author(s) https://orcid.org/0000-0002-7183-5203 en_US http://dx.doi.org/10.1038/ncomms14081 Nature Communications Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Xu, Yishuai Chiu, Janet Miao, Lin He, Haowei Kapitulnik, A. Biswas, Rudro R. Wray, L. Andrew Alpichshev, Zhanybek Disorder enabled band structure engineering of a topological insulator surface |
| title | Disorder enabled band structure engineering of a topological insulator surface |
| title_full | Disorder enabled band structure engineering of a topological insulator surface |
| title_fullStr | Disorder enabled band structure engineering of a topological insulator surface |
| title_full_unstemmed | Disorder enabled band structure engineering of a topological insulator surface |
| title_short | Disorder enabled band structure engineering of a topological insulator surface |
| title_sort | disorder enabled band structure engineering of a topological insulator surface |
| url | http://hdl.handle.net/1721.1/110095 https://orcid.org/0000-0002-7183-5203 |
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