Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has l...

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Bibliographic Details
Main Authors: Ooi, K. J. A., Ng, D. K. T., Wang, T., Chee, A. K. L., Ng, S. K., Wang, Q., Ang, L. K., Tan, D. T. H., Agarwal, Anuradha, Kimerling, Lionel C
Other Authors: Massachusetts Institute of Technology. Materials Processing Center
Format: Article
Language:en_US
Published: Nature Publishing Group 2017
Online Access:http://hdl.handle.net/1721.1/110129
https://orcid.org/0000-0002-3913-6189

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