Highly tensile-strained Ge/InAlAs nanocomposites
Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance mate...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/110156 |
| _version_ | 1826210614770401280 |
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| author | Jung, Daehwan Faucher, Joseph Mukherjee, Samik Ironside, Daniel J. Cabral, Matthew Sang, Xiahan Lebeau, James Bank, Seth R. Buonassisi, Tonio Moutanabbir, Oussama Lee, Minjoo Larry Akey, Austin J |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Jung, Daehwan Faucher, Joseph Mukherjee, Samik Ironside, Daniel J. Cabral, Matthew Sang, Xiahan Lebeau, James Bank, Seth R. Buonassisi, Tonio Moutanabbir, Oussama Lee, Minjoo Larry Akey, Austin J |
| author_sort | Jung, Daehwan |
| collection | MIT |
| description | Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In[subscript 0.52]Al[subscript 0.48]As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material. |
| first_indexed | 2024-09-23T14:52:26Z |
| format | Article |
| id | mit-1721.1/110156 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:52:26Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1101562022-09-29T11:10:38Z Highly tensile-strained Ge/InAlAs nanocomposites Jung, Daehwan Faucher, Joseph Mukherjee, Samik Ironside, Daniel J. Cabral, Matthew Sang, Xiahan Lebeau, James Bank, Seth R. Buonassisi, Tonio Moutanabbir, Oussama Lee, Minjoo Larry Akey, Austin J Massachusetts Institute of Technology. Department of Mechanical Engineering Akey, Austin J Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In[subscript 0.52]Al[subscript 0.48]As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material. National Science Foundation (U.S.) (DMR 1506371) 2017-06-21T20:08:52Z 2017-06-21T20:08:52Z 2017-01 2016-02 Article http://purl.org/eprint/type/JournalArticle 2041-1723 http://hdl.handle.net/1721.1/110156 Jung, Daehwan; Faucher, Joseph; Mukherjee, Samik; Akey, Austin; Ironside, Daniel J.; Cabral, Matthew and Sang, Xiahan et al. “Highly Tensile-Strained Ge/InAlAs Nanocomposites.” Nature Communications 8 (January 2017): 14204 © 2017 The Author(s) en_US http://dx.doi.org/10.1038/ncomms14204 Nature Communications Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Jung, Daehwan Faucher, Joseph Mukherjee, Samik Ironside, Daniel J. Cabral, Matthew Sang, Xiahan Lebeau, James Bank, Seth R. Buonassisi, Tonio Moutanabbir, Oussama Lee, Minjoo Larry Akey, Austin J Highly tensile-strained Ge/InAlAs nanocomposites |
| title | Highly tensile-strained Ge/InAlAs nanocomposites |
| title_full | Highly tensile-strained Ge/InAlAs nanocomposites |
| title_fullStr | Highly tensile-strained Ge/InAlAs nanocomposites |
| title_full_unstemmed | Highly tensile-strained Ge/InAlAs nanocomposites |
| title_short | Highly tensile-strained Ge/InAlAs nanocomposites |
| title_sort | highly tensile strained ge inalas nanocomposites |
| url | http://hdl.handle.net/1721.1/110156 |
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