Measurement and modeling of transient effects in partially-depleted SOI MOSFETs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/11017 |
| _version_ | 1826206864191258624 |
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| author | Wei, Andy, 1972- |
| author2 | Dimitri A. Antoniadis. |
| author_facet | Dimitri A. Antoniadis. Wei, Andy, 1972- |
| author_sort | Wei, Andy, 1972- |
| collection | MIT |
| description | Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996. |
| first_indexed | 2024-09-23T13:39:27Z |
| format | Thesis |
| id | mit-1721.1/11017 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:39:27Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/110172019-04-10T09:19:15Z Measurement and modeling of transient effects in partially-depleted SOI MOSFETs Wei, Andy, 1972- Dimitri A. Antoniadis. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996. Includes bibliographical references (leaves 75-76). by Andy Wei. M.S. 2005-08-18T16:00:01Z 2005-08-18T16:00:01Z 1996 1996 Thesis http://hdl.handle.net/1721.1/11017 35967767 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 76 leaves 5260667 bytes 5260422 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science Wei, Andy, 1972- Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title | Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title_full | Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title_fullStr | Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title_full_unstemmed | Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title_short | Measurement and modeling of transient effects in partially-depleted SOI MOSFETs |
| title_sort | measurement and modeling of transient effects in partially depleted soi mosfets |
| topic | Electrical Engineering and Computer Science |
| url | http://hdl.handle.net/1721.1/11017 |
| work_keys_str_mv | AT weiandy1972 measurementandmodelingoftransienteffectsinpartiallydepletedsoimosfets |