Measurement and modeling of transient effects in partially-depleted SOI MOSFETs

Measurement and modeling of transient effects in partially-depleted SOI MOSFETs

Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.

Bibliographic Details
Main Author:	Wei, Andy, 1972-
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2005
Subjects:	Electrical Engineering and Computer Science
Online Access:	http://hdl.handle.net/1721.1/11017

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