Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
Due to the high dissipated power densities in gallium nitride (GaN) high electron mobility transistors (HEMTs), temperature measurement techniques with high spatial resolution, such as micro-Raman thermography, are critical for ensuring device reliability. However, accurately determining the tempera...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2017
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| Online Access: | http://hdl.handle.net/1721.1/110800 https://orcid.org/0000-0002-5042-4819 https://orcid.org/0000-0001-7045-1200 |