Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2017.

Bibliographic Details
Main Author:	Jayanta Joglekar, Sameer
Other Authors:	Tomás Palacios.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2017
Subjects:	Materials Science and Engineering.
Online Access:	http://hdl.handle.net/1721.1/111325

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