A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
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Japan Society of Applied Physics
2017
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| Online Access: | http://hdl.handle.net/1721.1/111598 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811072510323589120 |
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| author | Hou, Haowen Liu, Zhihong Teng, Jinghua Chua, Soo-Jin Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hou, Haowen Liu, Zhihong Teng, Jinghua Chua, Soo-Jin Palacios, Tomas |
| author_sort | Hou, Haowen |
| collection | MIT |
| description | We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of 0.58 pW/Hz[superscript 0.5] for 0.14 THz radiation at room temperature. We consider these excellent results as due to the design of asymmetric nanoantennas. From simulation, we show that indeed such nanoantennas can effectively enhance the local electric field induced by sub-THz radiation and thereby improve the detection response. The excellent results indicate that GaN HEMTs with nanoantennas are future competitive detectors for sub-THz and THz imaging applications. |
| first_indexed | 2024-09-23T09:07:06Z |
| format | Article |
| id | mit-1721.1/111598 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:07:06Z |
| publishDate | 2017 |
| publisher | Japan Society of Applied Physics |
| record_format | dspace |
| spelling | mit-1721.1/1115982022-09-26T10:36:33Z A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas Hou, Haowen Liu, Zhihong Teng, Jinghua Chua, Soo-Jin Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of 0.58 pW/Hz[superscript 0.5] for 0.14 THz radiation at room temperature. We consider these excellent results as due to the design of asymmetric nanoantennas. From simulation, we show that indeed such nanoantennas can effectively enhance the local electric field induced by sub-THz radiation and thereby improve the detection response. The excellent results indicate that GaN HEMTs with nanoantennas are future competitive detectors for sub-THz and THz imaging applications. United States. Army Research Office (Contract W911NF-14-2-0071) 2017-09-18T18:19:04Z 2017-09-18T18:19:04Z 2016-11 2016-08 Article http://purl.org/eprint/type/JournalArticle 1882-0778 1882-0786 http://hdl.handle.net/1721.1/111598 Hou, Haowen et al. “A Sub-Terahertz Broadband Detector Based on a GaN High-Electron-Mobility Transistor with Nanoantennas.” Applied Physics Express 10, 1 (November 2016): 014101 © 2017 The Japan Society of Applied Physics https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.7567/APEX.10.014101 Applied Physics Express Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Japan Society of Applied Physics IOP Publishing |
| spellingShingle | Hou, Haowen Liu, Zhihong Teng, Jinghua Chua, Soo-Jin Palacios, Tomas A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title | A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title_full | A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title_fullStr | A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title_full_unstemmed | A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title_short | A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas |
| title_sort | sub terahertz broadband detector based on a gan high electron mobility transistor with nanoantennas |
| url | http://hdl.handle.net/1721.1/111598 https://orcid.org/0000-0002-2190-563X |
| work_keys_str_mv | AT houhaowen asubterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT liuzhihong asubterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT tengjinghua asubterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT chuasoojin asubterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT palaciostomas asubterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT houhaowen subterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT liuzhihong subterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT tengjinghua subterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT chuasoojin subterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas AT palaciostomas subterahertzbroadbanddetectorbasedonaganhighelectronmobilitytransistorwithnanoantennas |