A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas

A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas

We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R v) of 15 kV/W and a minimal noise equivalent power (NEP) of...

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Bibliographic Details
Main Authors:	Hou, Haowen, Liu, Zhihong, Teng, Jinghua, Chua, Soo-Jin, Palacios, Tomas
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	Japan Society of Applied Physics 2017
Online Access:	http://hdl.handle.net/1721.1/111598 https://orcid.org/0000-0002-2190-563X

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