Three-terminal resistive switch based on metal/metal oxide redox reactions
A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition b...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
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Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/111657 https://orcid.org/0000-0002-2076-5321 https://orcid.org/0000-0002-6858-8424 https://orcid.org/0000-0002-8719-2652 https://orcid.org/0000-0002-9998-7276 |
| Summary: | A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10 3 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current. |
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