Three-terminal resistive switch based on metal/metal oxide redox reactions
A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition b...
| Main Authors: | , , , , , |
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| Format: | Article |
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Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/111657 https://orcid.org/0000-0002-2076-5321 https://orcid.org/0000-0002-6858-8424 https://orcid.org/0000-0002-8719-2652 https://orcid.org/0000-0002-9998-7276 |
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| author | Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul O. Beach, Geoffrey Stephen |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul O. Beach, Geoffrey Stephen |
| author_sort | Huang, Mantao |
| collection | MIT |
| description | A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10 3 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current. |
| first_indexed | 2024-09-23T10:52:40Z |
| format | Article |
| id | mit-1721.1/111657 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T10:52:40Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1116572022-09-27T15:39:30Z Three-terminal resistive switch based on metal/metal oxide redox reactions Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul O. Beach, Geoffrey Stephen Lincoln Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul O. Beach, Geoffrey Stephen A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10 3 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current. National Science Foundation (U.S.) (Grant DMR-1419807) 2017-09-29T18:33:04Z 2017-09-29T18:33:04Z 2017-08 2017-04 2017-09-29T12:18:21Z Article http://purl.org/eprint/type/JournalArticle 2045-2322 http://hdl.handle.net/1721.1/111657 Huang, Mantao, et al. “Three-Terminal Resistive Switch Based on Metal/metal Oxide Redox Reactions.” Scientific Reports 7, 1 (August 2017): 7452 © 2017 The Author(s) https://orcid.org/0000-0002-2076-5321 https://orcid.org/0000-0002-6858-8424 https://orcid.org/0000-0002-8719-2652 https://orcid.org/0000-0002-9998-7276 http://dx.doi.org/10.1038/s41598-017-06954-x Scientific Reports Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul O. Beach, Geoffrey Stephen Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title | Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title_full | Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title_fullStr | Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title_full_unstemmed | Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title_short | Three-terminal resistive switch based on metal/metal oxide redox reactions |
| title_sort | three terminal resistive switch based on metal metal oxide redox reactions |
| url | http://hdl.handle.net/1721.1/111657 https://orcid.org/0000-0002-2076-5321 https://orcid.org/0000-0002-6858-8424 https://orcid.org/0000-0002-8719-2652 https://orcid.org/0000-0002-9998-7276 |
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