Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics
While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improve...
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| Format: | Article |
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American Chemical Society (ACS)
2017
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| Online Access: | http://hdl.handle.net/1721.1/111823 https://orcid.org/0000-0001-9722-3697 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0003-1281-2359 |
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| author | Nogay, Gizem Stuckelberger, Michael Johlin, Eric Carl Al-Obeidi, Ahmed F. Buonassisi, Anthony Grossman, Jeffrey C. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Nogay, Gizem Stuckelberger, Michael Johlin, Eric Carl Al-Obeidi, Ahmed F. Buonassisi, Anthony Grossman, Jeffrey C. |
| author_sort | Nogay, Gizem |
| collection | MIT |
| description | While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices. |
| first_indexed | 2024-09-23T14:13:25Z |
| format | Article |
| id | mit-1721.1/111823 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:13:25Z |
| publishDate | 2017 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1118232022-09-28T19:20:09Z Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics Nogay, Gizem Stuckelberger, Michael Johlin, Eric Carl Al-Obeidi, Ahmed F. Buonassisi, Anthony Grossman, Jeffrey C. Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Research Laboratory of Electronics Johlin, Eric Carl Al-Obeidi, Ahmed F. Buonassisi, Anthony Grossman, Jeffrey C. While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices. 2017-10-10T19:39:34Z 2017-10-10T19:39:34Z 2016-05 2016-01 2017-10-10T17:31:20Z Article http://purl.org/eprint/type/JournalArticle 1944-8244 1944-8252 http://hdl.handle.net/1721.1/111823 Johlin, Eric et al. “Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.” ACS Applied Materials & Interfaces 8, 24 (June 2016): 15169–15176 © 2016 American Chemical Society https://orcid.org/0000-0001-9722-3697 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0003-1281-2359 http://dx.doi.org/10.1021/ACSAMI.6B00033 ACS Applied Materials & Interfaces Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) MIT Web Domain |
| spellingShingle | Nogay, Gizem Stuckelberger, Michael Johlin, Eric Carl Al-Obeidi, Ahmed F. Buonassisi, Anthony Grossman, Jeffrey C. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title | Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title_full | Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title_fullStr | Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title_full_unstemmed | Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title_short | Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics |
| title_sort | nanohole structuring for improved performance of hydrogenated amorphous silicon photovoltaics |
| url | http://hdl.handle.net/1721.1/111823 https://orcid.org/0000-0001-9722-3697 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0003-1281-2359 |
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