Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials...
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SPIE
2017
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| Online Access: | http://hdl.handle.net/1721.1/111831 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826208776334606336 |
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| author | Wang, Bing Wang, Cong Lee, Kwang Hong Bao, Shuyu Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Wang, Bing Wang, Cong Lee, Kwang Hong Bao, Shuyu Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A |
| author_sort | Wang, Bing |
| collection | MIT |
| description | The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8'' Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 10⁶ /cm² by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8″ Ge-on-Si substrates and characterized. |
| first_indexed | 2024-09-23T14:12:10Z |
| format | Article |
| id | mit-1721.1/111831 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:12:10Z |
| publishDate | 2017 |
| publisher | SPIE |
| record_format | dspace |
| spelling | mit-1721.1/1118312022-09-28T19:10:47Z Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates Wang, Bing Wang, Cong Lee, Kwang Hong Bao, Shuyu Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A Massachusetts Institute of Technology. Department of Materials Science and Engineering Fitzgerald, Eugene A The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8'' Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 10⁶ /cm² by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8″ Ge-on-Si substrates and characterized. 2017-10-10T20:55:30Z 2017-10-10T20:55:30Z 2016-03 2017-10-06T16:21:52Z Article http://purl.org/eprint/type/ConferencePaper 0277-786X 1996-756X http://hdl.handle.net/1721.1/111831 Wang, Bing et al. “Red InGaP Light-Emitting Diodes Epitaxially Grown on Engineered Ge-on-Si Substrates.” Edited by Heonsu Jeon, Li-Wei Tu, Michael R. Krames, and Martin Strassburg. Proceedings of SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 9768 (March 2016): 97681J. © SPIE https://orcid.org/0000-0002-1891-1959 http://dx.doi.org/10.1117/12.2211562 Proceedings of SPIE--the Society of Photo-Optical Instrumentation Engineers Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE |
| spellingShingle | Wang, Bing Wang, Cong Lee, Kwang Hong Bao, Shuyu Lee, Kenneth Eng Kian Tan, Chuan Seng Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title_full | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title_fullStr | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title_full_unstemmed | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title_short | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates |
| title_sort | red ingap light emitting diodes epitaxially grown on engineered ge on si substrates |
| url | http://hdl.handle.net/1721.1/111831 https://orcid.org/0000-0002-1891-1959 |
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