Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

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The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials...

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Bibliographic Details
Main Authors: Wang, Bing, Wang, Cong, Lee, Kwang Hong, Bao, Shuyu, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Michel, Jurgen, Fitzgerald, Eugene A
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: SPIE 2017
Online Access:http://hdl.handle.net/1721.1/111831
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/111831
https://orcid.org/0000-0002-1891-1959

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