Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

We report on the growth of In 0.30 Ga 0.70 As channel high-electron mobility transistor (HEMT) epi-layers on a 200 mm silicon wafer by metal organic chemical vapor deposition (MOCVD). The device epi-layers were grown on a silicon substrate by using a ∼ 3 μm thick buffer comprising a Ge layer, a GaAs...

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Bibliographic Details
Main Authors: Nguyen, X.S., Yadav, S., Lee, K.H., Kohen, D., Kumar, A., Made, R.I., Gong, X., Lee, K.E., Tan, C.S., Yoon, S.F., Chua, S.J., Fitzgerald, Eugene A
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: CS Mantech 2017
Online Access:http://hdl.handle.net/1721.1/111840
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/111840
https://orcid.org/0000-0002-1891-1959

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