Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

We report on the growth of In 0.30 Ga 0.70 As channel high-electron mobility transistor (HEMT) epi-layers on a 200 mm silicon wafer by metal organic chemical vapor deposition (MOCVD). The device epi-layers were grown on a silicon substrate by using a ∼ 3 μm thick buffer comprising a Ge layer, a GaAs...

Full description

Bibliographic Details
Main Authors:	Nguyen, X.S., Yadav, S., Lee, K.H., Kohen, D., Kumar, A., Made, R.I., Gong, X., Lee, K.E., Tan, C.S., Yoon, S.F., Chua, S.J., Fitzgerald, Eugene A
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Published:	CS Mantech 2017
Online Access:	http://hdl.handle.net/1721.1/111840 https://orcid.org/0000-0002-1891-1959

Similar Items

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration
by: Bulsara, Mayank, et al.
Published: (2012)

MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
by: Loke, Wan Khai, et al.
Published: (2020)

Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process
by: Lee, Kwang Hong, et al.
Published: (2018)

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
by: Kwang Hong Lee, et al.
Published: (2018-01-01)

Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits
by: Shaver, David C., et al.
Published: (2010)

Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies
by: del Alamo, Jesus A.
Published: (2015)

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
by: Lee, Kwang Hong, et al.
Published: (2017)

Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers
by: H. Mehdi, et al.
Published: (2021-08-01)

Wafer bonding of processed Si CMOS VLSI and GaAs for mixed technology integration
by: Barkley, Edward Robert, 1977-
Published: (2005)

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
by: Lee, Kwang Hong, et al.
Published: (2020)

InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance
by: C. Convertino, et al.
Published: (2019-01-01)

Optimized Technologies for Cointegration of MOS Transistor and Glucose Oxidase Enzyme on a Si-Wafer
by: Cristian Ravariu, et al.
Published: (2021-12-01)

Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices
by: London, Joanna M., 1974-
Published: (2009)

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
by: Wan Sik Hwang, et al.
Published: (2015-01-01)

High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers
by: Loke, Wan Khai, et al.
Published: (2020)

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers
by: Loke Wan Khai, et al.
Published: (2020-01-01)

CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
by: Wang, Yue, et al.
Published: (2022)

InGaAs-OI Substrate Fabrication on a 300 mm Wafer
by: Sebastien Sollier, et al.
Published: (2016-09-01)

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers
by: Wang, Bing, et al.
Published: (2017)

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers
by: Wang, Bing, et al.
Published: (2019)

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
by: Van, N, et al.
Published: (2014)

Analytical Performance Modeling of InP-InGaAs Hetero-junction Avalanche Photodiode
by: الهام كاضم أونيس
Published: (2009-12-01)

On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si
by: Chung, Jinwook, et al.
Published: (2010)

Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications
by: Talib Al-Ameri, et al.
Published: (2017-01-01)

A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs
by: Vardi, Assaf, et al.
Published: (2019)

Determination of group velocity based on nanoindentation using Si and SiO2/Si wafers
by: Oga Norimasa, et al.
Published: (2021-07-01)

SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
by: Cheng, Zhiyuan, et al.
Published: (2003)

Interfacial structures evolution at hetero interfaces in SiCf/SiC | Nb | SiCf/SiC sandwich cladding structure
by: Hailong Qin, et al.
Published: (2023-09-01)

High-Performance InGaAs HEMTs on Si Substrates for RF Applications
by: Bo Wang, et al.
Published: (2022-01-01)

Low temperature direct wafer bonding of GaAs to Si via plasma activation
by: Xu, D. W., et al.
Published: (2014)

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer
by: Zihao Yang, et al.
Published: (2023-11-01)

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
by: Ayumi Onaka-Masada, et al.
Published: (2020-11-01)

Advanced Epitaxy on 2D Materials for Bottom-up Heterointegration with Low-defects and Membrane Production with High-throughput
by: Lu, Kuangye
Published: (2023)

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
by: Piner, Edwin L., et al.
Published: (2010)

Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
by: Palacios, Tomas, et al.
Published: (2010)

Effects of surface activation time on Si-Si direct wafer bonding at room temperature
by: Song Yang, et al.
Published: (2021-01-01)

Monolithic integration of GAAS-to-SI by direct wafer bonding
by: Yeo, Chiew Yong
Published: (2014)

Atmospheric CW S-Lidars with Si/InGaAs Arrays: Potentialities in Real Environment
by: Ravil Agishev, et al.
Published: (2023-04-01)

Heterogeneously Integrated InGaAs and Si Membrane Four-Color Photodetector Arrays
by: Laxmy Menon, et al.
Published: (2016-01-01)

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
by: Kaname Imokawa, et al.
Published: (2020-01-01)