Photovoltaic effect by vapor-printed polyselenophene
Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Elsevier
2017
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| Online Access: | http://hdl.handle.net/1721.1/111995 https://orcid.org/0000-0002-2258-3636 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0001-6127-1056 |
| Summary: | Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-situ shadow masking. The vapor-printed PSe exhibits a reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the red compared to its sulfur containing analog, polythiophene. These relative advantages are most likely explained by selenium’s enhanced electron-donating character compared to sulfur. The HOMO level of PSe was determined to be at −4.85 eV. The maximum power conversion efficiency achieved was 0.4% using a bilayer heterojunction device architecture with C₆₀ as the donor. |
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