Photovoltaic effect by vapor-printed polyselenophene
Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-...
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| Format: | Article |
| Language: | en_US |
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Elsevier
2017
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| Online Access: | http://hdl.handle.net/1721.1/111995 https://orcid.org/0000-0002-2258-3636 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0001-6127-1056 |
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| author | Jo, Won Jun Borrelli, David C Bulovic, Vladimir Gleason, Karen K |
| author2 | Massachusetts Institute of Technology. Department of Chemical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Chemical Engineering Jo, Won Jun Borrelli, David C Bulovic, Vladimir Gleason, Karen K |
| author_sort | Jo, Won Jun |
| collection | MIT |
| description | Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-situ shadow masking. The vapor-printed PSe exhibits a reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the red compared to its sulfur containing analog, polythiophene. These relative advantages are most likely explained by selenium’s enhanced electron-donating character compared to sulfur. The HOMO level of PSe was determined to be at −4.85 eV. The maximum power conversion efficiency achieved was 0.4% using a bilayer heterojunction device architecture with C₆₀ as the donor. |
| first_indexed | 2024-09-23T08:47:22Z |
| format | Article |
| id | mit-1721.1/111995 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:47:22Z |
| publishDate | 2017 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | mit-1721.1/1119952022-09-30T11:16:45Z Photovoltaic effect by vapor-printed polyselenophene Jo, Won Jun Borrelli, David C Bulovic, Vladimir Gleason, Karen K Massachusetts Institute of Technology. Department of Chemical Engineering Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gleason, Karen K. Jo, Won Jun Borrelli, David C Bulovic, Vladimir Gleason, Karen K Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-situ shadow masking. The vapor-printed PSe exhibits a reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the red compared to its sulfur containing analog, polythiophene. These relative advantages are most likely explained by selenium’s enhanced electron-donating character compared to sulfur. The HOMO level of PSe was determined to be at −4.85 eV. The maximum power conversion efficiency achieved was 0.4% using a bilayer heterojunction device architecture with C₆₀ as the donor. United States. Army Research Office (W911NF-13-D-0001) 2017-10-30T14:53:03Z 2017-10-30T14:53:03Z 2015-07 2015-07 Article http://purl.org/eprint/type/JournalArticle 1566-1199 http://hdl.handle.net/1721.1/111995 Jo, Won Jun et al. “Photovoltaic Effect by Vapor-Printed Polyselenophene.” Organic Electronics 26 (November 2015): 55–60 © 2015 Elsevier B.V. https://orcid.org/0000-0002-2258-3636 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0001-6127-1056 en_US http://dx.doi.org/10.1016/j.orgel.2015.07.017 Organic Electronics Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Elsevier Prof. Gleason via Erja Kajosalo |
| spellingShingle | Jo, Won Jun Borrelli, David C Bulovic, Vladimir Gleason, Karen K Photovoltaic effect by vapor-printed polyselenophene |
| title | Photovoltaic effect by vapor-printed polyselenophene |
| title_full | Photovoltaic effect by vapor-printed polyselenophene |
| title_fullStr | Photovoltaic effect by vapor-printed polyselenophene |
| title_full_unstemmed | Photovoltaic effect by vapor-printed polyselenophene |
| title_short | Photovoltaic effect by vapor-printed polyselenophene |
| title_sort | photovoltaic effect by vapor printed polyselenophene |
| url | http://hdl.handle.net/1721.1/111995 https://orcid.org/0000-0002-2258-3636 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0001-6127-1056 |
| work_keys_str_mv | AT jowonjun photovoltaiceffectbyvaporprintedpolyselenophene AT borrellidavidc photovoltaiceffectbyvaporprintedpolyselenophene AT bulovicvladimir photovoltaiceffectbyvaporprintedpolyselenophene AT gleasonkarenk photovoltaiceffectbyvaporprintedpolyselenophene |