A nanofabricated, monolithic, path-separated electron interferometer

Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron...

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Bibliographic Details
Main Authors: Dyck, Dirk van, Agarwal, Akshay, Kim, Chungsoo, Hobbs, Richard, Berggren, Karl K
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: Nature Publishing Group 2017
Online Access:http://hdl.handle.net/1721.1/112709
https://orcid.org/0000-0002-5944-3346
https://orcid.org/0000-0002-8547-0639
https://orcid.org/0000-0003-0855-3710
https://orcid.org/0000-0001-7453-9031
Description
Summary:Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20 μm. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope grid by gallium focused-ion-beam milling. Using this interferometer, we obtain interference fringes in a Mach-Zehnder geometry in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the [111] lattice planes of silicon, and a maximum contrast of 15%. We use convergent-beam electron diffraction to quantify grating alignment and coherence. This design can potentially be scaled to millimeter-scale, and used in electron holography. It could also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.