Phonon Conduction in Silicon Nanobeam Labyrinths

Here we study single-crystalline silicon nanobeams having 470 nm width and 80 nm thickness cross section, where we produce tortuous thermal paths (i.e. labyrinths) by introducing slits to control the impact of the unobstructed "line-of-sight" (LOS) between the heat source and heat sink. Th...

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Main Authors: Park, Woosung, Romano, Giuseppe, Ahn, Ethan C., Kodama, Takashi, Park, Joonsuk, Barako, Michael T., Sohn, Joon, Kim, Soo Jin, Cho, Jungwan, Marconnet, Amy M., Asheghi, Mehdi, Kolpak, Alexie M., Goodson, Kenneth E.
其他作者: Massachusetts Institute of Technology. Department of Mechanical Engineering
格式: 文件
出版: Nature Publishing Group 2018
在线阅读:http://hdl.handle.net/1721.1/113683
https://orcid.org/0000-0002-4347-0139
_version_ 1826203594240557056
author Park, Woosung
Romano, Giuseppe
Ahn, Ethan C.
Kodama, Takashi
Park, Joonsuk
Barako, Michael T.
Sohn, Joon
Kim, Soo Jin
Cho, Jungwan
Marconnet, Amy M.
Asheghi, Mehdi
Kolpak, Alexie M.
Goodson, Kenneth E.
author2 Massachusetts Institute of Technology. Department of Mechanical Engineering
author_facet Massachusetts Institute of Technology. Department of Mechanical Engineering
Park, Woosung
Romano, Giuseppe
Ahn, Ethan C.
Kodama, Takashi
Park, Joonsuk
Barako, Michael T.
Sohn, Joon
Kim, Soo Jin
Cho, Jungwan
Marconnet, Amy M.
Asheghi, Mehdi
Kolpak, Alexie M.
Goodson, Kenneth E.
author_sort Park, Woosung
collection MIT
description Here we study single-crystalline silicon nanobeams having 470 nm width and 80 nm thickness cross section, where we produce tortuous thermal paths (i.e. labyrinths) by introducing slits to control the impact of the unobstructed "line-of-sight" (LOS) between the heat source and heat sink. The labyrinths range from straight nanobeams with a complete LOS along the entire length to nanobeams in which the LOS ranges from partially to entirely blocked by introducing slits, s = 95, 195, 245, 295 and 395 nm. The measured thermal conductivity of the samples decreases monotonically from ∼47 W m⁻¹ K⁻¹ for straight beam to ∼31 W m⁻¹ K⁻¹ for slit width of 395 nm. A model prediction through a combination of the Boltzmann transport equation and ab initio calculations shows an excellent agreement with the experimental data to within ∼8%. The model prediction for the most tortuous path (s = 395 nm) is reduced by ∼14% compared to a straight beam of equivalent cross section. This study suggests that LOS is an important metric for characterizing and interpreting phonon propagation in nanostructures.
first_indexed 2024-09-23T12:39:46Z
format Article
id mit-1721.1/113683
institution Massachusetts Institute of Technology
last_indexed 2024-09-23T12:39:46Z
publishDate 2018
publisher Nature Publishing Group
record_format dspace
spelling mit-1721.1/1136832022-09-28T09:18:52Z Phonon Conduction in Silicon Nanobeam Labyrinths Park, Woosung Romano, Giuseppe Ahn, Ethan C. Kodama, Takashi Park, Joonsuk Barako, Michael T. Sohn, Joon Kim, Soo Jin Cho, Jungwan Marconnet, Amy M. Asheghi, Mehdi Kolpak, Alexie M. Goodson, Kenneth E. Massachusetts Institute of Technology. Department of Mechanical Engineering Romano, Giuseppe Kolpak, Alexie M. Here we study single-crystalline silicon nanobeams having 470 nm width and 80 nm thickness cross section, where we produce tortuous thermal paths (i.e. labyrinths) by introducing slits to control the impact of the unobstructed "line-of-sight" (LOS) between the heat source and heat sink. The labyrinths range from straight nanobeams with a complete LOS along the entire length to nanobeams in which the LOS ranges from partially to entirely blocked by introducing slits, s = 95, 195, 245, 295 and 395 nm. The measured thermal conductivity of the samples decreases monotonically from ∼47 W m⁻¹ K⁻¹ for straight beam to ∼31 W m⁻¹ K⁻¹ for slit width of 395 nm. A model prediction through a combination of the Boltzmann transport equation and ab initio calculations shows an excellent agreement with the experimental data to within ∼8%. The model prediction for the most tortuous path (s = 395 nm) is reduced by ∼14% compared to a straight beam of equivalent cross section. This study suggests that LOS is an important metric for characterizing and interpreting phonon propagation in nanostructures. National Science Foundation (U.S.) (Grant 1336734) United States. Department of Energy. Office of Basic Energy Sciences (Award DE-SC0001299) United States. Department of Energy. Office of Basic Energy Sciences (Award DE-FG02-09ER46577) 2018-02-15T16:03:40Z 2018-02-15T16:03:40Z 2017-07 2017-03 2018-02-09T17:41:23Z Article http://purl.org/eprint/type/JournalArticle 2045-2322 http://hdl.handle.net/1721.1/113683 Park, Woosung et al. “Phonon Conduction in Silicon Nanobeam Labyrinths.” Scientific Reports 7, 1 (July 2017): 6233 © 2017 The Author(s) https://orcid.org/0000-0002-4347-0139 http://dx.doi.org/10.1038/S41598-017-06479-3 Scientific Reports Creative Commons Attribution 4.0 International License https://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group
spellingShingle Park, Woosung
Romano, Giuseppe
Ahn, Ethan C.
Kodama, Takashi
Park, Joonsuk
Barako, Michael T.
Sohn, Joon
Kim, Soo Jin
Cho, Jungwan
Marconnet, Amy M.
Asheghi, Mehdi
Kolpak, Alexie M.
Goodson, Kenneth E.
Phonon Conduction in Silicon Nanobeam Labyrinths
title Phonon Conduction in Silicon Nanobeam Labyrinths
title_full Phonon Conduction in Silicon Nanobeam Labyrinths
title_fullStr Phonon Conduction in Silicon Nanobeam Labyrinths
title_full_unstemmed Phonon Conduction in Silicon Nanobeam Labyrinths
title_short Phonon Conduction in Silicon Nanobeam Labyrinths
title_sort phonon conduction in silicon nanobeam labyrinths
url http://hdl.handle.net/1721.1/113683
https://orcid.org/0000-0002-4347-0139
work_keys_str_mv AT parkwoosung phononconductioninsiliconnanobeamlabyrinths
AT romanogiuseppe phononconductioninsiliconnanobeamlabyrinths
AT ahnethanc phononconductioninsiliconnanobeamlabyrinths
AT kodamatakashi phononconductioninsiliconnanobeamlabyrinths
AT parkjoonsuk phononconductioninsiliconnanobeamlabyrinths
AT barakomichaelt phononconductioninsiliconnanobeamlabyrinths
AT sohnjoon phononconductioninsiliconnanobeamlabyrinths
AT kimsoojin phononconductioninsiliconnanobeamlabyrinths
AT chojungwan phononconductioninsiliconnanobeamlabyrinths
AT marconnetamym phononconductioninsiliconnanobeamlabyrinths
AT asheghimehdi phononconductioninsiliconnanobeamlabyrinths
AT kolpakalexiem phononconductioninsiliconnanobeamlabyrinths
AT goodsonkennethe phononconductioninsiliconnanobeamlabyrinths