Approaching the ideal elastic strain limit in silicon nanowires

Approaching the ideal elastic strain limit in silicon nanowires

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~1...

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Bibliographic Details
Main Authors:	Zhang, H., Tersoff, J., Xu, S., Chen, H., Zhang, Q., Zhang, K., Yang, Y., Lee, C.-S., Tu, K.-N., Lu, Y., Li, James
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Published:	American Association for the Advancement of Science (AAAS) 2018
Online Access:	http://hdl.handle.net/1721.1/113684

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