GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2017.

Detalhes bibliográficos
Autor principal:	Heidelberger, Christopher
Outros Autores:	Eugene A. Fitzgerald.
Formato:	Tese
Idioma:	eng
Publicado em:	Massachusetts Institute of Technology 2018
Assuntos:	Materials Science and Engineering.
Acesso em linha:	http://hdl.handle.net/1721.1/113927

Internet

http://hdl.handle.net/1721.1/113927