Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2018
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| Online Access: | http://hdl.handle.net/1721.1/114089 |
| _version_ | 1826195077939068928 |
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| author | Lee, Grace W. (Grace Wang) |
| author2 | August F. Witt. |
| author_facet | August F. Witt. Lee, Grace W. (Grace Wang) |
| author_sort | Lee, Grace W. (Grace Wang) |
| collection | MIT |
| description | Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001. |
| first_indexed | 2024-09-23T10:06:40Z |
| format | Thesis |
| id | mit-1721.1/114089 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T10:06:40Z |
| publishDate | 2018 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/1140892019-04-10T18:16:29Z Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals Lee, Grace W. (Grace Wang) August F. Witt. Massachusetts Institute of Technology. Department of Materials Science and Engineering. Massachusetts Institute of Technology. Department of Materials Science and Engineering. Materials Science and Engineering. Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001. Cataloged from PDF version of thesis. Includes bibliographical references (page 23). The purpose of this work is to characterize the optical absorption in bismuth silicon oxide (Bi₁₂SiO₂₀) crystals grown using the Bridgman technique and to identify electronic transitions responsible for absorption. Optical measurements were taken in the range of 0.4 - 11 pm at 300 K and 77 K using a spectrometer. The results show that near the band edge, there is evidence of indirect transitions at 2.3 eV and excition transitions at 1.8 eV. Low temperature measurements revealed peaks of free carrier absorption in the visible light range at 1.7 eV and 2.1 eV. Illuminated samples at low temperature revealed empty donor levels in the visible range at 1.6-1.9 eV and 2.1 eV, indicating the presence of the photochromic effect and photorefractivity. by Grace W. Lee. S.B. 2018-03-12T19:29:25Z 2018-03-12T19:29:25Z 2001 2001 Thesis http://hdl.handle.net/1721.1/114089 1027217097 eng MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 23 pages application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Lee, Grace W. (Grace Wang) Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title | Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title_full | Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title_fullStr | Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title_full_unstemmed | Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title_short | Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals |
| title_sort | optical absorption of bismuth silicon oxide bi₁₂sio₂₀ crystals |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/114089 |
| work_keys_str_mv | AT leegracewgracewang opticalabsorptionofbismuthsiliconoxidebi12sio20crystals |